它已被證明在這篇關于具有與各種聚合物，他們以前只顯示活動范圍的N溝道FET溝道有機操作無處不在。他們的研究結果也必須與其他相關的情況下，無機氧化物表面被放置在與分子半導體接觸。讓我們在考慮光伏應用的一個例子，在單分子器件。這些發現提出應開辟有機互補金屬氧化物半導體（CMOS）電路的新機遇，其中p型和n型行為的利用。 在這篇文章中表明，一個合適的羥基自由柵介質如divinyltetramethylsiloxane -雙（苯并環丁烯）可以使用在大多數的共軛聚合物的N溝道FET的傳導率。場效應管的電子遷移率，從而得到揭示，電子是相當多的移動這些材料比以前認為的。對各種聚合物的不同訂單的電子遷移率的也都是在不結盟國家。根據計算結果進一步表明，為什么n型行為以前在俘獲的電子在半導體電介質界面是由羥基進行如此微妙，因此目前在不同的國家形式中常用的SiO2介質的情況下。 近年來在有機FET的大量研究一直側重于半導體及其聯系人。盡管柵極介電層的重要性，有報道很少報告正在研究實際的柵極電介質系統或電介質半導體接口本身。在最近的一些消息來源已經描述了一個強大的可交聯的BCB是有機半導體聚合物可以提供高品質的自由界面。這個BCB可以顯示高介電擊穿強度比分別為有機半導體其他常用的導電聚合物，也可以是一種為實際低柵極電壓塑料晶體管所需的超薄膜溶液澆鑄。
It has been demonstrated in this article about featuring of the ubiquity of n-channel organic FET operation with a variety of range of polymers which they earlier thought to show only p-channel activity. Their findings must also be pertinent to other relevant cases where inorganic oxide surfaces are placed in contact with molecular semiconductors. Let us consider an example in photovoltaic applications, and in single-molecule devices. These findings which are brought up should hence open up new opportunities for organic complementary metal-oxide semiconductor (CMOS) circuits, in which both p-type and n-type behaviours are harnessed.
In this article it is demonstrated that the use of an appropriate hydroxyl-free gate dielectric such as a divinyltetramethylsiloxane - bis (benzocyclobutene) can yield n-channel FET conduction in most of the conjugated polymers. The FET electron mobilities thus obtained reveal that electrons are considerably more mobile in these materials than previously thought. Electron mobility's of different orders for various polymers are also shown which are all in the unaligned state. In accordance it is further shown that the reason why n-type behaviour has formerly been so subtle in the trapping of electrons at the semiconductor dielectric interface which is conducted by hydroxyl groups, thus present in the form of different state in the case of the commonly used SiO2 dielectric.
論文代寫香港,論文代寫推薦,論文修改價錢 In recent times a great deal of the research in organic FETs has traditionally focused on the semiconductor and its contacts. In spite of the importance of the gate dielectric, there have been reporting quite few reports which are examining practical gate dielectric systems or the dielectric-semiconductor interface itself. Recently in some sources it has been described that a robust crosslinkable BCB which is a polymer can provide a high-quality hydroxyl-free interface to the organic semiconductor. This BCB can show a high dielectric breakdown strength which is more than other conductive polymers which are in common use for the organic semiconductor, and can also be a solution-cast to form the ultrathin films which are needed for practical low-gate-voltage plastic transistors.